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  ? semiconductor components industries, llc, 2002 april, 2002 rev. 1 1 publication order number: ntd32n06l/d ntd32n06l power mosfet 32 amps, 60 volts, logic level nchannel dpak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. features ? smaller package than mtb30n06vl ? lower r ds(on) ? lower v ds(on) ? lower total gate charge ? lower and tighter v sd ? lower diode reverse recovery time ? lower reverse recovery stored charge typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 10 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p  10 ms) v gs v gs  15  20 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p  10 m s) i d i d i dm 32 22 90 adc apk total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t a = 25 c (note 1.) total power dissipation @ t a = 25 c (note 2.) p d 93.75 0.625 2.88 1.5 w w/ c w w operating and storage temperature range t j , t stg 55 to +175 c single pulse draintosource avalanche energy starting t j = 25 c (note 3.) (v dd = 50 vdc, v gs = 5 vdc, l = 1.0 mh, i l(pk) = 25 a, v ds = 60 vdc, r g = 25 w ) e as 313 mj thermal resistance junctiontocase junctiontoambient (note 1.) junctiontoambient (note 2.) r q jc r q ja r q ja 1.6 52 100 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using 1 pad size, (cu area 1.127 in 2 ). 2. when surface mounted to an fr4 board using minimum recommended pad size, (cu area 0.412 in 2 ). 3. repetitive rating; pulse width limited by maximum junction temperature. 32 amperes 60 volts r ds(on) = 28 m  device package shipping ordering information ntd32n06l dpak 75 units/rail case 369a dpak style 2 pin assignment nchannel d s g ntd32n06l1 dpak 75 units/rail marking diagram ntd32n06l = device code y = year ww = work week t = mosfet yww ntd 32n06l 1 gate 3 source 2 drain ntd32n06lt4 dpak 2500 tape & reel 4 drain 1 2 3 4 http://onsemi.com
ntd32n06l http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 1) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 70 62 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 15 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 1) gate threshold voltage (note 1) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 1.0 1.7 4.8 2.0 vdc mv/ c static draintosource onresistance (note 1) (v gs = 5 vdc, i d = 16 adc) r ds(on) 23.7 28 m  static draintosource onresistance (note 1) (v gs = 5 vdc, i d = 20 adc) (v gs = 5 vdc, i d = 32 adc) (v gs = 5 vdc, i d = 16 adc, t j = 150 c) v ds(on) 0.48 0.78 0.61 0.67 vdc forward transconductance (note 1) (v ds = 6 vdc, i d = 16 adc) g fs 27 mhos dynamic characteristics input capacitance (v 25 vd v 0vd c iss 1214 1700 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 343 480 transfer capacitance f = 1 . 0 mhz) c rss 87 180 switching characteristics (note 2) turnon delay time t d(on) 12.8 30 ns rise time (v dd = 30 vdc, i d = 32 adc, v gs = 5 vdc t r 221 450 turnoff delay time v gs = 5 vdc, r g = 9.1 w ) (note 1) t d(off) 37 80 fall time r g 9.1 w ) (note 1) t f 128 260 gate charge (v 48 vd i 32 ad q t 23 50 nc (v ds = 48 vdc, i d = 32 adc, v gs = 5 vdc ) ( note 1 ) q 1 4.5 v gs = 5 vdc) (note 1) q 2 14 sourcedrain diode characteristics forward onvoltage (i s = 20 adc, v gs = 0 vdc) (note 1) (i s = 32 adc, v gs = 0 vdc) (note 1) (i s = 20 adc, v gs = 0 vdc, t j = 150 c) v sd 0.89 0.95 0.74 1.0 vdc reverse recovery time (i 32 ad v 0vd t rr 56 ns (i s = 32 adc, v gs = 0 vdc, di s /dt = 100 a/ m s ) ( note 1 ) t a 31 di s /dt = 100 a/ m s) (note 1) t b 25 reverse recovery stored charge q rr 0.093  c 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperatures.
ntd32n06l http://onsemi.com 3 1.8 1.6 1.2 1.4 1 0.8 0.6 100 10 1000 10000 40 20 50 10 30 0 60 0.026 0 50 4 20 2 1 v ds , draintosource voltage (volts) i d , drain current (amps) 0 v gs , gatetosource voltage (volts) figure 1. onregion characteristics figure 2. transfer characteristics i d , drain current (amps) 0 0.042 0.038 0.026 40 30 20 0.03 0.022 0.018 0.014 0.01 10 50 60 figure 3. onresistance vs. drain current i d , drain current (amps) figure 4. onresistance vs. drain current i d , drain current (amps) r ds(on) , draintosource resistance ( w ) r ds(on) , draintosource resistance ( w ) figure 5. onresistance variation with temperature t j , junction temperature ( c) figure 6. draintosource leakage current vs. voltage v ds , draintosource voltage (volts) r ds(on) , draintosource resistance (normalized) i dss , leakage (na) 60 50 50 25 0 25 75 125 100 1.8 3.4 3.8 3 2.6 4.2 2.2 5 03040 20 50 10 60 0.01 0.03 0.022 0.018 0.034 0.042 04050 30 20 60 10 v gs = 10 v 3 10 30 40 v gs = 8 v v gs = 6 v v gs = 5 v v gs = 4.5 v v gs = 4 v v gs = 3.5 v v gs = 3 v v ds > = 10 v t j = 25 c t j = 55 c t j = 100 c 4.6 t j = 25 c t j = 55 c t j = 100 c v gs = 5 v v gs = 10 v 150 175 v gs = 0 v t j = 150 c t j = 100 c t j = 125 c i d = 16 a v gs = 5 v 0.014 0.038 0.034 t j = 25 c t j = 55 c t j = 100 c
ntd32n06l http://onsemi.com 4 1000 100 10 1 0.1 1000 100 10 6 5 4 3 2 1 0 350 150 100 50 0 32 28 24 20 16 12 0 10 3200 2800 10 2400 2000 15 5 020 gatetosource or draintosource voltage (volts) c, capacitance (pf) 1600 1200 800 400 0 5 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gatetosource and draintosource voltage vs. total charge v gs , gatetosource voltage (volts) figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( w ) figure 10. diode forward voltage vs. current v sd , sourcetodrain voltage (volts) i s , source current (amps) t, time (ns) figure 11. maximum rated forward biased safe operating area v ds , draintosource voltage (volts) figure 12. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse draintosource avalanche energy (mj) 25 0 16 20 12 824 4 1 10 100 0.6 0.76 0.88 0.72 0.68 0.92 0.64 0.96 0.1 10 100 1 25 125 150 100 75 175 50 i d = 32 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 8 4 0.8 0.84 q 2 c iss v gs = 20 v single pulse t c = 25 c v ds = 30 v i d = 32 a v gs = 5 v v gs = 0 v t j = 25 c i d = 32 a 10 ms 1 ms 100 m s dc t r t d(off) t d(on) t f v gs v ds q 1 200 250 300 4000 mounted on 3 sq. fr4 board (1 sq. 2 oz. cu 0.06 thick single sided) with one die operating,10 s max q t r ds(on) limit thermal limit package limit 3600
ntd32n06l http://onsemi.com 5 10 0.1 0.01 0.00001 0.0001 r(t) , effective transient thermal response (normalized) t, time (s) figure 13. thermal response 1 0.001 0.01 0.1 1 10 100 1000 10 0.1 0.01 0.00001 0.0001 r(t) , effective transient thermal resistance (normalized) t, time (s) 1 0.001 0.01 0.1 1 10 figure 14. thermal response normalized to r q jc at steady state normalized to r q ja at steady state, 1 square cu pad, cu area 1.127 in 2 , 3 x 3 inch fr4 board
ntd32n06l http://onsemi.com 6 package dimensions dpak case 369a13 issue ab d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4
ntd32n06l http://onsemi.com 7 notes
ntd32n06l http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntd32n06l/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada


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